
Plantinized wafer
Platinum Electrode

because of its high thermal conductivity and good stability in oxidizing atmospheres.
MEMS film such as PZT, PLZT, etc., needs high temperature of more than 600 ◦C for crystallization
Type | Orientation of Pt | Layer Thickness(nm) | Orientation of Si wafer | ||
---|---|---|---|---|---|
Pt/Ti/SiO2/Si | (111) | Pt | Ti | SiO2 | (100) / (111) |
150 | 10 | 300 | |||
Pt/TiO2/SiO2/Si | (111) | Pt | TiO2 | SiO2 | |
150 | 20 | 300 | |||
* Thickness of each layer can be changed upon request. |
Standard Pt wafers | Thickness : 50 ㎚ ~ 300 ㎚ |
Substrates : Ti or TiO2/SiO2/Si wafers or customers’ preference | |
Size : 4 ~ 6 inch | |
Orientation : (111) | |
FWHM : ~ 1.4 ° for Pt/Ti | |
Temperature endurance : ~ 800 ℃ | |
Roughness : ~ 1.5 ㎚ | |
MEMS wafers | Pt/LTO/SOI wafer for MEMS application |
Pt/Ti or Ta/ Low stress Si3N4/SiO2/Si wafer | |
Other structured wafers → need discussion | |
Other electrodes | Al, Ti, Mo, Ta, Cr, Ni, Au, LaNiO3 |
Standard Platinized Wafer Properties

Microstructure![]() |
Adhesion![]()
- Loading rate(mN/min) = 19,990
- Critical load Lc(mN) = 13,700 - Frictional force(mN) = 1,054 - Acoustic emission = 21.6
By Scratch test
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Crystal Orientation

Crystal Orientation

