THIN FILM

TECHNOLOGY
  • Platinized wafer
  • Chemical solution
  • Metal coating service
  • Piezoelectric measurement system
Plantinized wafer

Platinum Electrode


Platinum layer is the most widely used as bottom electrode for Si-based devices
because of its high thermal conductivity and good stability in oxidizing atmospheres.
MEMS film such as PZT, PLZT, etc., needs high temperature of more than 600 ◦C for crystallization

Specifications of KCMC’s Standard Platinized Wafers

Type Orientation of Pt Layer Thickness(nm) Orientation of Si wafer
Pt/Ti/SiO2/Si (111) Pt Ti SiO2 (100) / (111)
150 10 300
Pt/TiO2/SiO2/Si (111) Pt TiO2 SiO2
150 20 300
* Thickness of each layer can be changed upon request.

Standard Pt wafers Thickness : 50 ㎚ ~ 300 ㎚
Substrates : Ti or TiO2/SiO2/Si wafers or customers’ preference
Size : 4 ~ 6 inch
Orientation : (111)
FWHM : ~ 1.4 ° for Pt/Ti
Temperature endurance : ~ 800 ℃
Roughness : ~ 1.5 ㎚
MEMS wafers Pt/LTO/SOI wafer for MEMS application
Pt/Ti or Ta/ Low stress Si3N4/SiO2/Si wafer
Other structured wafers → need discussion
Other electrodes Al, Ti, Mo, Ta, Cr, Ni, Au, LaNiO3

Standard Platinized Wafer Properties



Resistivity





Microstructure

Adhesion

  - Loading rate(mN/min) = 19,990
  - Critical load Lc(mN) = 13,700
  - Frictional force(mN) = 1,054
  - Acoustic emission = 21.6
By Scratch test  




Crystal Orientation





Crystal Orientation