Plantinized wafer
Platinum Electrode
Platinum layer is the most widely used as bottom electrode for Si-based devicesbecause of its high thermal conductivity and good stability in oxidizing atmospheres.
MEMS film such as PZT, PLZT, etc., needs high temperature of more than 600 ◦C for crystallization
| Type | Orientation of Pt | Layer Thickness(nm) | Orientation of Si wafer | ||
|---|---|---|---|---|---|
| Pt/Ti/SiO2/Si | (111) | Pt | Ti | SiO2 | (100) / (111) |
| 150 | 10 | 300 | |||
| Pt/TiO2/SiO2/Si | (111) | Pt | TiO2 | SiO2 | |
| 150 | 20 | 300 | |||
| * Thickness of each layer can be changed upon request. | |||||
| Standard Pt wafers | Thickness : 50 ㎚ ~ 300 ㎚ |
| Substrates : Ti or TiO2/SiO2/Si wafers or customers’ preference | |
| Size : 4 ~ 6 inch | |
| Orientation : (111) | |
| FWHM : ~ 1.4 ° for Pt/Ti | |
| Temperature endurance : ~ 800 ℃ | |
| Roughness : ~ 1.5 ㎚ | |
| MEMS wafers | Pt/LTO/SOI wafer for MEMS application |
| Pt/Ti or Ta/ Low stress Si3N4/SiO2/Si wafer | |
| Other structured wafers → need discussion | |
| Other electrodes | Al, Ti, Mo, Ta, Cr, Ni, Au, LaNiO3 |
Standard Platinized Wafer Properties
Microstructure
|
Adhesion
- Loading rate(mN/min) = 19,990
- Critical load Lc(mN) = 13,700 - Frictional force(mN) = 1,054 - Acoustic emission = 21.6
By Scratch test
|
Crystal Orientation
Crystal Orientation
